PNY Electronics PNY 2GB vs A-DATA Technology DDR4 3200 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

A-DATA Technology DDR4 3200 8GB

需要考虑的原因
A-DATA Technology DDR4 3200 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.8

测试中的平均数值
更快的写入速度，GB/s

14.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

A-DATA Technology DDR4 3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.8 18.2
写入速度，GB/s

8.4 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Corsair CMK16GX4M2Z3600C14 8GB

Corsair CMK16GX4M2Z3600C14 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Kingston HX316C10F/4 4GB

Kingston HX316C10F/4 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB