Samsung M378B5673EH1-CF8 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 -22% 更低的延时
更快的读取速度，GB/s

18.1 12.7

测试中的平均数值
更快的写入速度，GB/s

15.0 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 23
读取速度，GB/s

12.7 18.1
写入速度，GB/s

7.5 15.0
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

G Skill Intl F4-4400C18-8GTRG 8GB

G Skill Intl F4-4400C18-8GTRG 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology BLS8G4D240FSCK.8FD 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Kingston MSI26D4S9D8ME-16 16GB

Kingston MSI26D4S9D8ME-16 16GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Kingston KHX3333C16D4/8GX 8GB

Kingston KHX3333C16D4/8GX 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB