RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
比较
SK Hynix HMT41GU7MFR8A-H9 8GB vs Crucial Technology BLS4G4D240FSE.8FE 4GB
总分
SK Hynix HMT41GU7MFR8A-H9 8GB
总分
Crucial Technology BLS4G4D240FSE.8FE 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT41GU7MFR8A-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
65
左右 58% 更低的延时
更快的写入速度,GB/s
9.0
8.7
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FE 4GB
报告一个错误
更快的读取速度,GB/s
17.5
14.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
65
读取速度,GB/s
14.8
17.5
写入速度,GB/s
9.0
8.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2650
1921
SK Hynix HMT41GU7MFR8A-H9 8GB RAM的比较
Kingston 9965525-018.A00LF 4GB
SK Hynix HMT41GU7MFR8A-PB 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston MSI21D4S15HAG/8G 8GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMR32GX4M2C3000C15 16GB
Strontium EVMT8G1600U86S 8GB
Corsair CMK16GX4M2Z2400C16 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston XJ69DF-MIE 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C18-8GTZ 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3466C16-16GTZSW 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
×
Bug description
Source link