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Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
比较
Crucial Technology CT51264AC800.C16FC 4GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB
总分
Crucial Technology CT51264AC800.C16FC 4GB
总分
Micron Technology 16ATF2G64AZ-2G3B1 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
更快的读取速度,GB/s
4
15
测试中的平均数值
更快的写入速度,GB/s
2,378.6
10.4
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
62
左右 -77% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
35
读取速度,GB/s
4,670.6
15.0
写入速度,GB/s
2,378.6
10.4
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
861
2672
Crucial Technology CT51264AC800.C16FC 4GB RAM的比较
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
AMD R5S38G1601U2S 8GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
Kingston 9905403-038.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
UMAX Technology D4-2666-8GB-1024X8-L 8GB
Crucial Technology BLT8G3D1608DT2TXRG 8GB
Mushkin 996902 2GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905702-184.A00G 8GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Samsung DDR3 8GB 1600MHz 8GB
Essencore Limited IM48GU88N26-GIIHMB 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4133C19-8GTZKKF 8GB
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
报告一个错误
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Bug description
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