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Qimonda 72T128420EFA3SB2 1GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB

Qimonda 72T128420EFA3SB2 1GB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB

总分
star star star star star
Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

差异 规格 评论

差异

Qimonda 72T128420EFA3SB2 1GB 需要考虑的原因
Qimonda 72T128420EFA3SB2 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,069.2 left arrow 10.8
    测试中的平均数值
Micron Technology 8ATF1G64HZ-2G3B2 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 106
    左右 -165% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Qimonda 72T128420EFA3SB2 1GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    106 left arrow 40
  • 读取速度，GB/s
    3,273.7 left arrow 13.4
  • 写入速度，GB/s
    2,069.2 left arrow 10.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    734 left arrow 2495

Qimonda 72T128420EFA3SB2 1GB RAM的比较

Qimonda 72T128401EFA3SC2 512MB
Kingston KP6FH5-MIE 32GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Samsung M393A1G43EB1-CRC 8GB
Samsung M393A1G43EB1-CRC 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 76.D305G.D060B 16GB
Apacer Technology 76.D305G.D060B 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
SK Hynix HMA851S6DJR6N-XN 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
内存RAM
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
Crucial Technology CT8G4DFD824A.C16FBR2 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS8G4D240FSE.16FBD2 8GB
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内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK4GX4M1A2400C14 4GB
Corsair CMK4GX4M1A2400C14 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
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