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Team Group Inc. UD5-6400 16GB
Samsung M471A4G43MB1-CTD 32GB

Team Group Inc. UD5-6400 16GB vs Samsung M471A4G43MB1-CTD 32GB

总分
star star star star star
Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分
star star star star star
Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

差异 规格 评论

差异

Team Group Inc. UD5-6400 16GB 需要考虑的原因
Team Group Inc. UD5-6400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 37
    左右 43% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 11.6
    测试中的平均数值
Samsung M471A4G43MB1-CTD 32GB 需要考虑的原因
Samsung M471A4G43MB1-CTD 32GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Team Group Inc. UD5-6400 16GB
Samsung M471A4G43MB1-CTD 32GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 37
  • 读取速度，GB/s
    15.0 left arrow 15.0
  • 写入速度，GB/s
    13.9 left arrow 11.6
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3774 left arrow 2907

Team Group Inc. UD5-6400 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4400C16-8GTRS 8GB

Samsung M471A4G43MB1-CTD 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378B5773DH0-CH9 2GB
Samsung M471A2G43AB2-CWE 16GB
Samsung M471A2G43AB2-CWE 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA82GU6AFR8N-UH 16GB
SK Hynix HMA82GU6AFR8N-UH 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGRN.40C0B 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3733C17-8GTZSW 8GB
G Skill Intl F4-3733C17-8GTZSW 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
内存RAM
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Kingston 9965604-033.D00G 16GB
Kingston 9965604-033.D00G 16GB
内存RAM
SK Hynix HMT41GS6AFR8A-PB 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM