Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 24

左右 -9% 更低的延时
更快的读取速度，GB/s

17.7 16

测试中的平均数值
更快的写入速度，GB/s

13.7 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 22
读取速度，GB/s

16.0 17.7
写入速度，GB/s

12.5 13.7
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 3066

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A2K43CB1-CRCR 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Crucial Technology CT4G4DFS8213.8FA11 4GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA82GU6JJR8N-VK 16GB

SK Hynix HMA82GU6JJR8N-VK 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB