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Samsung M378B5673EH1-CF8 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Report a bug
Below the latency in the PassMark tests, ns
23
28
Around -22% lower latency
Faster reading speed, GB/s
18.1
12.7
Average value in the tests
Faster write speed, GB/s
15.0
7.5
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
23
Read speed, GB/s
12.7
18.1
Write speed, GB/s
7.5
15.0
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1988
3317
Samsung M378B5673EH1-CF8 2GB RAM comparisons
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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
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