G Skill Intl F3-1333C9-4GIS 4GB vs Corsair CMW16GX4M2D3600C18 8GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 29

左右 3% 更低的延时

Corsair CMW16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2D3600C18 8GB

报告一个错误

更快的读取速度，GB/s

18.3 12.4

测试中的平均数值
更快的写入速度，GB/s

15.1 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CMW16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 29
读取速度，GB/s

12.4 18.3
写入速度，GB/s

7.5 15.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2014 3529

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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AMD R744G2400U1S-UO 4GB

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Kingston 9905403-156.A00LF 2GB

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Kingston K1N7HK-ELC 2GB

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G Skill Intl F4-2400C17-8GVR 8GB

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

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G Skill Intl F4-2400C15-8GRB 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston 9965640-008.A01G 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Transcend Information TS512MSH64V1H 4GB

Transcend Information TS512MSH64V1H 4GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB