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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3200C14-8GTZKO 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZKO 8GB

G Skill Intl F4-3200C14-8GTZKO 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-3200C14-8GTZKO 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZKO 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 29
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    21 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 17
  • 读取速度，GB/s
    16.9 left arrow 21.0
  • 写入速度，GB/s
    12.0 left arrow 15.6
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3481

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-3200C14-8GTZKO 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
G Skill Intl F4-3200C14-8GTZKO 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMW16GX4M2C3466C16 8GB
Corsair CMW16GX4M2C3466C16 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-2666C19-8GVR 8GB
G Skill Intl F4-2666C19-8GVR 8GB
内存RAM
Kingston KHX2666C13D4/4GX 4GB
Kingston KHX2666C13D4/4GX 4GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMR32GX4M2C3000C15 16GB
Corsair CMR32GX4M2C3000C15 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Corsair CMR16GX4M2C3600C18 8GB
Corsair CMR16GX4M2C3600C18 8GB
内存RAM
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM