Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-4133C19-8GTZSWC 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-4133C19-8GTZSWC 8GB

G Skill Intl F4-4133C19-8GTZSWC 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-4133C19-8GTZSWC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZSWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 -32% 更低的延时
更快的读取速度，GB/s

17.5 16.9

测试中的平均数值
更快的写入速度，GB/s

13.7 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4133C19-8GTZSWC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 22
读取速度，GB/s

16.9 17.5
写入速度，GB/s

12.0 13.7
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 3288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston KVR26N19D8/16 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 99U5471-012.A00 4GB

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Smart Modular SMS4TDC3C0K0446SCG 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3200C16-16GTZRX 16GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Samsung M378B5673FH0-CH9 2GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT8G4SFS632A 8GB