Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Golden Empire CL16-18-18 D4-3400 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更快的读取速度，GB/s

16.9 14.4

测试中的平均数值
更快的写入速度，GB/s

12.0 11.2

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Golden Empire CL16-18-18 D4-3400 4GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3400 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 -12% 更低的延时

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Golden Empire CL16-18-18 D4-3400 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 26
读取速度，GB/s

16.9 14.4
写入速度，GB/s

12.0 11.2
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2846

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Golden Empire CL16-18-18 D4-3400 4GB

Golden Empire CL16-18-18 D4-3400 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology CT8G4SFS8266.M8FB 8GB

Crucial Technology CT8G4SFS8266.M8FB 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB