Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Kingston KHX3466C19D4/16G 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Kingston KHX3466C19D4/16G 16GB

Kingston KHX3466C19D4/16G 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

Kingston KHX3466C19D4/16G 16GB

需要考虑的原因
Kingston KHX3466C19D4/16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 -16% 更低的延时
更快的读取速度，GB/s

17.6 16.9

测试中的平均数值
更快的写入速度，GB/s

13.7 12.0

测试中的平均数值
更高的内存带宽，mbps

27700 19200

左右 1.44 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX3466C19D4/16G 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 25
读取速度，GB/s

16.9 17.6
写入速度，GB/s

12.0 13.7
内存带宽，mbps

19200 27700

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz no data
排名PassMark (越多越好)

2601 3542

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Gloway International Co. Ltd. TYP4U3000E16082C 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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SK Hynix HMA82GR7AFR4N-VK 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMD64GX4M8B3200C16 8GB

Corsair CMD64GX4M8B3200C16 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB