Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 4ATF51264AZ-2G3B1 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 34

左右 15% 更低的延时
更快的读取速度，GB/s

16.9 15.6

测试中的平均数值
更快的写入速度，GB/s

12.0 11.2

测试中的平均数值

Micron Technology 4ATF51264AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-2G3B1 4GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 34
读取速度，GB/s

16.9 15.6
写入速度，GB/s

12.0 11.2
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2601 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965589-007.D01G 8GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMX8GX3M2A1600C11 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMD32GX4M4A2666C15 8GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

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Corsair CMR16GX4M2C3000C15 8GB

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Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB