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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 8ATF1G64AZ-2G3B1 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 34
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.2
    测试中的平均数值
Micron Technology 8ATF1G64AZ-2G3B1 8GB 需要考虑的原因
Micron Technology 8ATF1G64AZ-2G3B1 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 34
  • 读取速度，GB/s
    16.9 left arrow 15.9
  • 写入速度，GB/s
    12.0 left arrow 11.2
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2800

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB RAM的比较

Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
内存RAM
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Corsair CMSX16GX4M1A2400C16 16GB
Corsair CMSX16GX4M1A2400C16 16GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Transcend Information JM3200HLE-16G 16GB
Transcend Information JM3200HLE-16G 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M393A4K40CB1-CRC 32GB
Samsung M393A4K40CB1-CRC 32GB
内存RAM