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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Micron Technology 8ATF1G64AZ-3G2R1 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
31
左右 6% 更低的延时
需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB
报告一个错误
更快的写入速度,GB/s
12.4
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
31
读取速度,GB/s
16.9
16.9
写入速度,GB/s
12.0
12.4
内存带宽,mbps
19200
no data
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
, 1.20000005, CAS Supported:
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
no data
排名PassMark (越多越好)
2601
3043
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB RAM的比较
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PUSKILL DDR3 1600 8G 8GB
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Corsair VS2GB1333D4 2GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Golden Empire CL16-18-18 D4-3000 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Samsung M378B5673FH0-CH9 2GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Kingston KHX3200C16D4/8GX 8GB
Kingston K9CXF2-MIE 8GB
Kingston KVR533D2N4 512MB
Corsair CMH16GX4M2Z3600C18 8GB
报告一个错误
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Bug description
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