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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43EB2-CVF 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M378A1K43EB2-CVF 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
Samsung M378A1K43EB2-CVF 8GB 需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 12.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 19200
    左右 1.22 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43EB2-CVF 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 28
  • 读取速度，GB/s
    16.9 left arrow 17.4
  • 写入速度，GB/s
    12.0 left arrow 14.5
  • 内存带宽，mbps
    19200 left arrow 23400
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3419

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M378A1K43EB2-CVF 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905598-019.A00G 16GB
Kingston 9905598-019.A00G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905630-005.A00G 8GB
Kingston 9905630-005.A00G 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston X5H5PW-MIE 8GB
Kingston X5H5PW-MIE 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905678-026.A00G 8GB
Kingston 9905678-026.A00G 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16G2666CL19 16GB
Micron Technology 16G2666CL19 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Apacer Technology 78.CAGP7.40C0B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
内存RAM