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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K43BB1-CRCA1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M393A2K43BB1-CRCA1 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M393A2K43BB1-CRCA1 16GB

Samsung M393A2K43BB1-CRCA1 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 56
    左右 48% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 7.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 4.4
    测试中的平均数值
Samsung M393A2K43BB1-CRCA1 16GB 需要考虑的原因
Samsung M393A2K43BB1-CRCA1 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K43BB1-CRCA1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 56
  • 读取速度，GB/s
    16.9 left arrow 7.5
  • 写入速度，GB/s
    12.0 left arrow 4.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 1598

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M393A2K43BB1-CRCA1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K43BB1-CRCA1 16GB
Samsung M393A2K43BB1-CRCA1 16GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CMK32GX4M4B3200C14 8GB
Corsair CMK32GX4M4B3200C14 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Mushkin MR[A/B]4U320LLLM16G 16GB
Mushkin MR[A/B]4U320LLLM16G 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston ACR26D4S9S1ME-4 4GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Mushkin MR[ABC]4U360JNNM16G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
内存RAM