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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43CB1-CRC 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M471A1K43CB1-CRC 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Samsung M471A1K43CB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
37
左右 22% 更低的延时
更快的读取速度,GB/s
16.9
13.9
测试中的平均数值
更快的写入速度,GB/s
12.0
9.9
测试中的平均数值
需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A1K43CB1-CRC 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
37
读取速度,GB/s
16.9
13.9
写入速度,GB/s
12.0
9.9
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2389
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Samsung M471A1K43CB1-CRC 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5673EH1-CF8 2GB
Samsung M471A5244BB0-CRC 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C18-32GTRS 32GB
Samsung M393B5170FH0-CK0 4GB
Transcend Information JM2400HSB-8G 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905700-026.A00G 8GB
Kingston KVT8FP-HYC 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston HP24D4U7S8MD-8 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 9905713-008.A00G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Samsung M378B5673EH1-CF8 2GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3300C16-4GRRD 4GB
报告一个错误
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Bug description
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