Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2G43BB3-CWE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A2G43BB3-CWE 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Samsung M378A2G43BB3-CWE 16GB

Samsung M378A2G43BB3-CWE 16GB

差异

  • 低于PassMark测试中的延时,ns
    24 left arrow 38
    左右 37% 更低的延时
  • 更快的写入速度,GB/s
    12.5 left arrow 10.4
    测试中的平均数值
  • 更快的读取速度,GB/s
    17.9 left arrow 16
    测试中的平均数值
  • 更高的内存带宽,mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2G43BB3-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时,ns
    24 left arrow 38
  • 读取速度,GB/s
    16.0 left arrow 17.9
  • 写入速度,GB/s
    12.5 left arrow 10.4
  • 内存带宽,mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3030
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较