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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2G43BB3-CWE 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A2G43BB3-CWE 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M378A2G43BB3-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
38
左右 37% 更低的延时
更快的写入速度,GB/s
12.5
10.4
测试中的平均数值
需要考虑的原因
Samsung M378A2G43BB3-CWE 16GB
报告一个错误
更快的读取速度,GB/s
17.9
16
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2G43BB3-CWE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
38
读取速度,GB/s
16.0
17.9
写入速度,GB/s
12.5
10.4
内存带宽,mbps
19200
25600
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2925
3030
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung M378A2G43BB3-CWE 16GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMD8GX4M2B3466C18 4GB
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Corsair CMZ16GX3M2A2400C10 8GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CB16GS2666.C8ET 16GB
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Corsair CMK16GX4M2C3000C16 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMR16GX4M2A2666C16 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.CAGR4.40C0B 8GB
报告一个错误
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Bug description
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