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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143EB0-CPB 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M471A5143EB0-CPB 4GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Samsung M471A5143EB0-CPB 4GB 需要考虑的原因
Samsung M471A5143EB0-CPB 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143EB0-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 35
  • 读取速度，GB/s
    16.9 left arrow 13.5
  • 写入速度，GB/s
    12.0 left arrow 10.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2155

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M471A5143EB0-CPB 4GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
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Crucial Technology CT51264BF160BJ.C8F 4GB
Crucial Technology CT51264BF160BJ.C8F 4GB
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Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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SK Hynix HMA81GR7AFR8N-UH 8GB
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G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology BL16G36C16U4BL.M8FB1 16GB
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Qimonda 72T128420EFA3SB2 1GB
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Corsair CM4X8GE2400C15K4 8GB
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G Skill Intl F4-3000C15-8GVKB 8GB
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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内存RAM
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Kingston 9905624-004.A00G 4GB
内存RAM
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Corsair CM2X1024-6400C4 1GB
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Samsung M378A1G44BB0-CWE 8GB
内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Corsair CMK32GX4M4A2133C15 8GB
内存RAM
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Corsair CMZ16GX3M2A1866C10 8GB
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Crucial Technology CT8G4SFRA32A.M8FR 8GB
内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Crucial Technology CT8G4SFS824A.C8FDD1 8GB
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