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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Chun Well Technology Holding Limited D4U0830160B 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Chun Well Technology Holding Limited D4U0830160B 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
32
左右 25% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB
报告一个错误
更快的读取速度,GB/s
17.4
15.5
测试中的平均数值
更快的写入速度,GB/s
12.5
11.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
32
读取速度,GB/s
15.5
17.4
写入速度,GB/s
11.0
12.5
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2445
3137
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Chun Well Technology Holding Limited D4U0830160B 8GB
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Kingston KF552C40-16 16GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2666C19-8GIS 8GB
报告一个错误
×
Bug description
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