RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2666C19-8GIS 8GB

Samsung M471B5273DH0-CK0 4GB vs G Skill Intl F4-2666C19-8GIS 8GB

总分
star star star star star
Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分
star star star star star
G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

差异 规格 评论

差异

Samsung M471B5273DH0-CK0 4GB 需要考虑的原因
Samsung M471B5273DH0-CK0 4GB
报告一个错误
G Skill Intl F4-2666C19-8GIS 8GB 需要考虑的原因
G Skill Intl F4-2666C19-8GIS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 41
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2666C19-8GIS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 30
  • 读取速度，GB/s
    13.3 left arrow 16.5
  • 写入速度，GB/s
    9.0 left arrow 12.8
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2016 left arrow 3158

Samsung M471B5273DH0-CK0 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-2666C19-8GIS 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905598-039.A00G 16GB
Kingston 9905598-039.A00G 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Inmos + 256MB
Inmos + 256MB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3200C16-16GVK 16GB
G Skill Intl F4-3200C16-16GVK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[ABC]4U266GHHF8G 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Corsair CMD16GX4M2B2400C10 8GB
Corsair CMD16GX4M2B2400C10 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston KHX2400C12D4/8GX 8GB
Kingston KHX2400C12D4/8GX 8GB
内存RAM