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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Crucial Technology BLS4G4D26BFSB.8FB 4GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Crucial Technology BLS4G4D26BFSB.8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 38% 更低的延时
更快的读取速度,GB/s
15.5
13
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FB 4GB
报告一个错误
更快的写入速度,GB/s
13.5
11.0
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
39
读取速度,GB/s
15.5
13.0
写入速度,GB/s
11.0
13.5
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2445
2808
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
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Samsung M378T5663QZ3-CF7 2GB
SK Hynix HMA82GU7MFR8N-TF 16GB
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Micron Technology 16ATF2G64AZ-2G3B1 16GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Corsair CML16GX3M2A1600C10 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
报告一个错误
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