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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Crucial Technology CT16G4SFD824A.C16FBD 16GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Crucial Technology CT16G4SFD824A.C16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
38
左右 37% 更低的延时
更快的读取速度,GB/s
15.5
14.5
测试中的平均数值
更快的写入速度,GB/s
11.0
10.0
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBD 16GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
38
读取速度,GB/s
15.5
14.5
写入速度,GB/s
11.0
10.0
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2445
2509
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
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Chun Well Technology Holding Limited CL17-17-17 D4-2400
Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X4GF2133C13K4 4GB
Crucial Technology CT102464BF160B.C16 8GB
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G Skill Intl F2-5300CL4-1GBSA 1GB
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Kingston 9905403-134.A00LF 2GB
Kingston KHX2133C13D4/8GX 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
报告一个错误
×
Bug description
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