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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3000C15-8GVS 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs G Skill Intl F4-3000C15-8GVS 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
G Skill Intl F4-3000C15-8GVS 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 11% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3000C15-8GVS 8GB
报告一个错误
更快的读取速度,GB/s
18.9
15.5
测试中的平均数值
更快的写入速度,GB/s
14.7
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3000C15-8GVS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
27
读取速度,GB/s
15.5
18.9
写入速度,GB/s
11.0
14.7
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
3418
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3000C15-8GVS 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BL8G30C15U4W.M8FE 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2Z3200C16 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMSX4GX4M1A2400C16 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston CBD24D4S7D8ME-16 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.CAGPE.AUF0B 8GB
Kingston KHX2800C14D4/8GX 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Corsair CM3B4G2C1600L9 4GB
Samsung M474A4G43MB1-CTD 32GB
报告一个错误
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Bug description
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