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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs G Skill Intl F4-3200C14-8GTZ 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
G Skill Intl F4-3200C14-8GTZ 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C14-8GTZ 8GB
报告一个错误
更快的读取速度,GB/s
17.9
15.5
测试中的平均数值
更快的写入速度,GB/s
15.3
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
15.5
17.9
写入速度,GB/s
11.0
15.3
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
3567
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZ 8GB RAM的比较
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A2400C10 8GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
Swissbit MEU25664D6BC2EP-30 2GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
Samsung M378A5244CB0-CTD 4GB
G Skill Intl F4-2800C15-4GVRB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154G4NJK 4GB
Kingston KHX2133C11D3/4GX 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C16-8GTZR 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4000C15-8GTZR 8GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-2400C14-16GVK 16GB
报告一个错误
×
Bug description
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