Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs G Skill Intl F4-3600C18-8GTZRX 8GB

总分

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分

G Skill Intl F4-3600C18-8GTZRX 8GB

G Skill Intl F4-3600C18-8GTZRX 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 29

左右 17% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3600C18-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTZRX 8GB

报告一个错误

更快的读取速度，GB/s

18.3 15.5

测试中的平均数值
更快的写入速度，GB/s

15.3 11.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

G Skill Intl F4-3600C18-8GTZRX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 29
读取速度，GB/s

15.5 18.3
写入速度，GB/s

11.0 15.3
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2445 3555

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD8213.C16FAD 16GB

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Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

G Skill Intl F4-3600C18-8GTZRX 8GB

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Samsung M393B1G70BH0-YK0 8GB

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Kingston KHX2400C11D3/4GX 4GB

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Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston KF2933C17S4/16G 16GB

Kingston KF2933C17S4/16G 16GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB