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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung 9905599-020.A00G 16GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Samsung 9905599-020.A00G 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分
star star star star star
Samsung 9905599-020.A00G 16GB

Samsung 9905599-020.A00G 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 8% 更低的延时
Samsung 9905599-020.A00G 16GB 需要考虑的原因
Samsung 9905599-020.A00G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 11.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung 9905599-020.A00G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 26
  • 读取速度，GB/s
    15.5 left arrow 15.6
  • 写入速度，GB/s
    11.0 left arrow 13.2
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2783

Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung 9905599-020.A00G 16GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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