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Crucial Technology BLS8G3N169ES4.16FE 8GB
Avant Technology W641GU42J5213N3 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs Avant Technology W641GU42J5213N3 8GB

总分
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分
star star star star star
Avant Technology W641GU42J5213N3 8GB

Avant Technology W641GU42J5213N3 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.8 left arrow 6.1
    测试中的平均数值
Avant Technology W641GU42J5213N3 8GB 需要考虑的原因
Avant Technology W641GU42J5213N3 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 41
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 13.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N169ES4.16FE 8GB
Avant Technology W641GU42J5213N3 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 23
  • 读取速度，GB/s
    13.3 left arrow 13.7
  • 写入速度，GB/s
    8.8 left arrow 6.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2394 left arrow 2130

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM的比较

Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB

Avant Technology W641GU42J5213N3 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CM3X1G1600C9 1GB
Corsair CM3X1G1600C9 1GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-2800C15-4GTZB 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CB16GU2666.C8ET 16GB
Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Gloway International (HK) STK4U2400D15082C 8GB
Gloway International (HK) STK4U2400D15082C 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
Gold Key Technology Co Ltd NMGD480E82-3200D 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
内存RAM