Crucial Technology BLS8G3N169ES4.16FE 8GB vs Samsung M471B5673FH0-CH9 2GB

总分

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

差异规格评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB

报告一个错误

更快的读取速度，GB/s

13.3 11.1

测试中的平均数值
更快的写入速度，GB/s

8.8 8.2

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Samsung M471B5673FH0-CH9 2GB

需要考虑的原因
Samsung M471B5673FH0-CH9 2GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS8G3N169ES4.16FE 8GB

Samsung M471B5673FH0-CH9 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

41 41
读取速度，GB/s

13.3 11.1
写入速度，GB/s

8.8 8.2
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2394 1348

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMZ16GX3M2A2400C10 8GB

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Corsair CMR16GX4M2Z2933C16 8GB

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G Skill Intl F4-4133C19-4GTZ 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

Kllisre M378A1K43BB2-CRC 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905428-051.A00LF 4GB

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Kingston 9965589-008.D02G 8GB

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Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB