Crucial Technology BLS8G3N169ES4.16FE 8GB vs Kingston 9905624-013.A00G 8GB

总分

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分

Kingston 9905624-013.A00G 8GB

Kingston 9905624-013.A00G 8GB

差异规格评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB

报告一个错误

Kingston 9905624-013.A00G 8GB

需要考虑的原因
Kingston 9905624-013.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 41

左右 -52% 更低的延时
更快的读取速度，GB/s

14.5 13.3

测试中的平均数值
更快的写入速度，GB/s

10.2 8.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N169ES4.16FE 8GB

Kingston 9905624-013.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 27
读取速度，GB/s

13.3 14.5
写入速度，GB/s

8.8 10.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2394 2393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

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Samsung M386B4G70DM0-CMA4 32GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Chun Well Technology Holding Limited CL16-20-20 D4-3000

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