RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
42
67
左右 37% 更低的延时
更快的写入速度,GB/s
9.4
8.4
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
报告一个错误
更快的读取速度,GB/s
15.9
13.2
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
67
读取速度,GB/s
13.2
15.9
写入速度,GB/s
9.4
8.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2326
1895
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 9ASF1G72PZ-2G3A1 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Samsung M3 78T2863QZS-CF7 1GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Maxsun MSD48G32Q3 8GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3600C14-8GTZRA 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMWB8G1L3200K16W4 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
报告一个错误
×
Bug description
Source link