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Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C18-16GTZN 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs G Skill Intl F4-3600C18-16GTZN 16GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
G Skill Intl F4-3600C18-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3600C18-16GTZN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 42
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C18-16GTZN 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 30
  • 读取速度，GB/s
    13.2 left arrow 17.7
  • 写入速度，GB/s
    9.4 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 3606

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

G Skill Intl F4-3600C18-16GTZN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
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Crucial Technology CT8G4SFD824A.C16FDD2 8GB
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Kingston KHYXPX-MIE 8GB
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内存RAM
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Corsair CMX4GX3M2A1600C9 2GB
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GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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SK Hynix HMA84GR7AFR4N-UH 32GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
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内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Kingston KHX2666C13/16GX 16GB
Kingston KHX2666C13/16GX 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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Corsair CMK16GX4M2F4500C19 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
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Corsair CMK32GX4M1D3000C16 32GB
内存RAM