RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Kingmax Semiconductor GLNH23F-18---------- 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Kingmax Semiconductor GLNH23F-18---------- 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
42
67
左右 37% 更低的延时
更快的写入速度,GB/s
9.4
8.5
测试中的平均数值
需要考虑的原因
Kingmax Semiconductor GLNH23F-18---------- 16GB
报告一个错误
更快的读取速度,GB/s
16
13.2
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
67
读取速度,GB/s
13.2
16.0
写入速度,GB/s
9.4
8.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2326
2030
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5624-003.A00G 8GB
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA84GR7AFR4N-UH 32GB
Crucial Technology CT25664BA1339.M8FK 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Kingston 9905403-011.A03LF 2GB
Kingston KHX3200C18D4/8G 8GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston HP32D4U8D8HC-16XR 16GB
Kingston 99U5458-008.A00LF 4GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMD32GX4M4B3733C17 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology 4ATF51264AZ-2G3E1 4GB
Kingston ACR16D3LS1KNG/8G 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMU32GX4M2C3333C16 16GB
A-DATA Technology DQKD1A08 1GB
Golden Empire CL16-18-18 D4-3200 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS16G4D26BFSB.16FD 16GB
报告一个错误
×
Bug description
Source link