RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Micron Technology 4ATF51264AZ-3G2J1 4GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Micron Technology 4ATF51264AZ-3G2J1 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
Micron Technology 4ATF51264AZ-3G2J1 4GB
报告一个错误
低于PassMark测试中的延时,ns
34
42
左右 -24% 更低的延时
更快的读取速度,GB/s
17.3
13.2
测试中的平均数值
更快的写入速度,GB/s
12.0
9.4
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
34
读取速度,GB/s
13.2
17.3
写入速度,GB/s
9.4
12.0
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2326
2665
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905458-017.A01LF 4GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMH32GX4M2Z3200C16 16GB
Kingston 9905403-444.A00LF 4GB
Corsair CMD16GX4M2B3200C14 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Crucial Technology BL16G32C16U4W.16FE 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905665-021.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4SFS624A.C4FB 4GB
报告一个错误
×
Bug description
Source link