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Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Micron Technology 8ATF2G64AZ-3G2E1 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Micron Technology 8ATF2G64AZ-3G2E1 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
Micron Technology 8ATF2G64AZ-3G2E1 16GB
报告一个错误
低于PassMark测试中的延时,ns
33
42
左右 -27% 更低的延时
更快的读取速度,GB/s
16.9
13.2
测试中的平均数值
更快的写入速度,GB/s
10.4
9.4
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
33
读取速度,GB/s
13.2
16.9
写入速度,GB/s
9.4
10.4
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2326
3035
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston 9905703-008.A00G 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Kingston 99U5428-040.A00LF 4GB
Corsair CMSX16GX4M2A2666C18 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Avant Technology W641GU42J7240NC 8GB
A-DATA Technology AD73I1C1674EV 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-2400C15-8GVS 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Kingston 9965525-144.A00LF 8GB
Essencore Limited KD4AGU88C-26N1900 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C18-4GFX 4GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK64GX4M4K3733C17 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
报告一个错误
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