RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Panram International Corporation D4N2666PS-16G 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Panram International Corporation D4N2666PS-16G 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Panram International Corporation D4N2666PS-16G 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
Panram International Corporation D4N2666PS-16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
42
左右 -62% 更低的延时
更快的读取速度,GB/s
17.2
13.2
测试中的平均数值
更快的写入速度,GB/s
15.4
9.4
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Panram International Corporation D4N2666PS-16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
26
读取速度,GB/s
13.2
17.2
写入速度,GB/s
9.4
15.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2326
3617
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Panram International Corporation D4N2666PS-16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Panram International Corporation D4N2666PS-16G 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Kllisre D4 8G 8GB
Kingston 99U5403-124.A00LF 8GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
A-DATA Technology DDR3 1600 4GB
Corsair CMK16GX4M2Z3200C16 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kllisre 99P54280002.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMK32GX4M4A2400C16 8GB
Hexon Technology Pte Ltd HEXON 1GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3600C19-8GSXK 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3200C16-32GVK 32GB
SK Hynix HYMP112U64CP8-S6 1GB
Kllisre 8GB
报告一个错误
×
Bug description
Source link