RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
比较
Samsung 1600 CL10 Series 8GB vs Crucial Technology BLS4G4D26BFSE.8FB 4GB
总分
Samsung 1600 CL10 Series 8GB
总分
Crucial Technology BLS4G4D26BFSE.8FB 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
更快的读取速度,GB/s
16.1
15.7
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FB 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
25
左右 -14% 更低的延时
更快的写入速度,GB/s
12.4
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
22
读取速度,GB/s
16.1
15.7
写入速度,GB/s
10.1
12.4
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2764
3174
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMW32GX4M4C3200C16 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905598-009.A00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Kingston 99U5474-038.A00LF 4GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C17-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M378B5173BH0-CH9 4GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Samsung M378B5773CH0-CH9 2GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston 99U5458-008.A00LF 4GB
V-GEN D4H8GL26A8TS6 8GB
报告一个错误
×
Bug description
Source link