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Crucial Technology BLS8G4D26BFSE.16FB 8GB
Kingston KVR26N19D8/16 16GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB vs Kingston KVR26N19D8/16 16GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

总分
star star star star star
Kingston KVR26N19D8/16 16GB

Kingston KVR26N19D8/16 16GB

差异 规格 评论

差异

Crucial Technology BLS8G4D26BFSE.16FB 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 54
    左右 52% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 7.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 7.7
    测试中的平均数值
Kingston KVR26N19D8/16 16GB 需要考虑的原因
Kingston KVR26N19D8/16 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Kingston KVR26N19D8/16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 54
  • 读取速度，GB/s
    16.5 left arrow 7.6
  • 写入速度，GB/s
    10.1 left arrow 7.7
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3025 left arrow 1611

Crucial Technology BLS8G4D26BFSE.16FB 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KVR26N19D8/16 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information JM3200HLE-16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Essencore Limited KD44GU480-26N160T 4GB
内存RAM