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Crucial Technology BLT2G3D1608DT1TX0 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs ADVAN Inc AM42E28UD04T-NVL 4GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
ADVAN Inc AM42E28UD04T-NVL 4GB 需要考虑的原因
ADVAN Inc AM42E28UD04T-NVL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 23
  • 读取速度，GB/s
    13.6 left arrow 18.2
  • 写入速度，GB/s
    9.4 left arrow 14.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 2830

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

ADVAN Inc AM42E28UD04T-NVL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HMA82GU6AFR8N-UH 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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Corsair CMK16GX4M2F4500C19 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
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SK Hynix HYMP512U64CP8-Y5 1GB
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Super Talent F24SB8GH 8GB
内存RAM
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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Corsair CMK16GX4M2C3600C20 8GB
内存RAM
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Samsung M471B1G73DB0-YK0 8GB
INTENSO GKE800UD102408-2133 8GB
INTENSO GKE800UD102408-2133 8GB
内存RAM
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Kingston KHX318C10FR/8G 8GB
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
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Crucial Technology CT8G4DFS8266.C8FN 8GB
内存RAM
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TwinMOS 8DHE3MN8-HATP 2GB
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内存RAM