Samsung M471B1G73DB0-YK0 8GB vs INTENSO GKE800UD102408-2133 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

INTENSO GKE800UD102408-2133 8GB

需要考虑的原因
INTENSO GKE800UD102408-2133 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时
更快的读取速度，GB/s

15.5 11.9

测试中的平均数值
更快的写入速度，GB/s

9.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

INTENSO GKE800UD102408-2133 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 30
读取速度，GB/s

11.9 15.5
写入速度，GB/s

8.1 9.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2077 2496

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Samsung M471B1G73DB0-YK0 8GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Crucial Technology BL16G36C16U4RL.M16FE 16GB

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Peak Electronics 256X64M-67E 2GB

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Micron Technology 36ASF2G72PZ-2G3A3 16GB

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Kingston 9905598-006.A00G 8GB

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Corsair CMK8GX4M1A2400C16 8GB

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Kingston XWM8G1-MIE 32GB

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Corsair CMK128GX4M4A2400C16 32GB

Corsair CMK128GX4M4A2400C16 32GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT51264BD1339.M16F 4GB

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Team Group Inc. TEAMGROUP-UD4-2400 8GB

Team Group Inc. TEAMGROUP-UD4-2400 8GB

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Crucial Technology BLS4G4D240FSC.8FBR2 4GB