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Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMD8GX4M2B3200C16 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Corsair CMD8GX4M2B3200C16 4GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Corsair CMD8GX4M2B3200C16 4GB

Corsair CMD8GX4M2B3200C16 4GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 24
    左右 4% 更低的延时
Corsair CMD8GX4M2B3200C16 4GB 需要考虑的原因
Corsair CMD8GX4M2B3200C16 4GB
报告一个错误
  • 更快的读取速度，GB/s
    19.5 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Corsair CMD8GX4M2B3200C16 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 24
  • 读取速度，GB/s
    13.6 left arrow 19.5
  • 写入速度，GB/s
    9.4 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3718

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Corsair CMD8GX4M2B3200C16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Kingston 9905403-156.A00LF 2GB
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内存RAM
Kingston 9905584-016.A00LF 4GB
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Kingston 9965525-018.A00LF 4GB
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Samsung M391B1G73QH0-CMA 8GB
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TwinMOS 8DHE3MN8-HATP 2GB
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PUSKILL PJ8TFK1GM8 8GB
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内存RAM
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内存RAM
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内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
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G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM