Crucial Technology BLT2G3D1608DT1TX0 2GB vs Corsair CMK64GX4M4C3000C15 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Corsair CMK64GX4M4C3000C15 16GB

Corsair CMK64GX4M4C3000C15 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 41% 更低的延时

Corsair CMK64GX4M4C3000C15 16GB

需要考虑的原因
Corsair CMK64GX4M4C3000C15 16GB

报告一个错误

更快的读取速度，GB/s

14.7 13.6

测试中的平均数值
更快的写入速度，GB/s

14.6 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Corsair CMK64GX4M4C3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 39
读取速度，GB/s

13.6 14.7
写入速度，GB/s

9.4 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 3185

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL22-22-22 D4-3200

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Crucial Technology CT4G4DFS8213.C8FBD2 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB