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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung M393A5143DB0-CRC 4GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Samsung M393A5143DB0-CRC 4GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Samsung M393A5143DB0-CRC 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
47
左右 49% 更低的延时
更快的读取速度,GB/s
15.5
10
测试中的平均数值
更快的写入速度,GB/s
11.0
7.5
测试中的平均数值
需要考虑的原因
Samsung M393A5143DB0-CRC 4GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung M393A5143DB0-CRC 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
47
读取速度,GB/s
15.5
10.0
写入速度,GB/s
11.0
7.5
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2445
2308
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A5143DB0-CRC 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Samsung M393A5143DB0-CRC 4GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston LV36D4U1S8HD-8XR 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Gloway International (HK) STK4U2400D17082C 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9932291-002.A00G 4GB
SK Hynix DDR2 800 2G 2GB
Kingston 99U5702-025.A00G 8GB
SpecTek Incorporated ?????????????????? 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Samsung M378B5773DH0-CH9 2GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Micron Technology 16KTF51264HZ-1G6M1 4GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
G Skill Intl F4-2800C16-8GRR 8GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1K43DB2-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology CT8G4DFD8213.16FA11 8GB
报告一个错误
×
Bug description
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