Samsung M471B1G73DB0-YK0 8GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

总分

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异规格评论

差异

Samsung M471B1G73DB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73DB0-YK0 8GB

报告一个错误

更快的读取速度，GB/s

11.9 9.6

测试中的平均数值

Micron Technology 18ASF1G72AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 45

左右 -36% 更低的延时
更快的写入速度，GB/s

8.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 33
读取速度，GB/s

11.9 9.6
写入速度，GB/s

8.1 8.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2077 2286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology CT4G4SFS8213.C8FBR2 4GB

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Kingston KVR533D2N4 512MB

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Corsair CMG32GX4M2E3200C16 16GB

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Kingston KVT8FP-HYC 4GB

Apacer Technology 78.C1GS7.AUC0B 8GB

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Kingston 9965525-140.A00LF 8GB

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ATP Electronics Inc. A4G08QA8BNPBSE 8GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB

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ADVAN Inc AM42E28UD04T-NVL 4GB

ADVAN Inc AM42E28UD04T-NVL 4GB