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Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

总分
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
Micron Technology 18ASF1G72AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72AZ-2G1B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 46
    左右 -39% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.6 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 3200
    左右 5.31 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 33
  • 读取速度，GB/s
    2,909.8 left arrow 9.6
  • 写入速度，GB/s
    1,519.2 left arrow 8.6
  • 内存带宽，mbps
    3200 left arrow 17000
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2286

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMR32GX4M4C3200C16 8GB
Corsair CMR32GX4M4C3200C16 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
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Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMT32GX4M4Z3200C16 8GB
Corsair CMT32GX4M4Z3200C16 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905668-002.A00G 8GB
Kingston 9905668-002.A00G 8GB
内存RAM
TwinMOS 9D7TCO4E-TATP 8GB
TwinMOS 9D7TCO4E-TATP 8GB
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G Skill Intl F4-2400C15-16GIS 16GB
内存RAM
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Corsair CM2X1024-6400C4 1GB
Corsair CMK32GX4M2B3333C16 16GB
Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CMK16GX4M2A2800C16 8GB
Corsair CMK16GX4M2A2800C16 8GB
内存RAM
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
内存RAM