Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BL8G32C16U4WL.M8FE1 8GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 12% 更低的延时

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G32C16U4WL.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

21.2 13.6

测试中的平均数值
更快的写入速度，GB/s

16.4 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 26
读取速度，GB/s

13.6 21.2
写入速度，GB/s

9.4 16.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2096 3755

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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DSL Memory D4SS1G082SH21A-B 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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G Skill Intl F4-2133C15-4GFX 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

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Kingston 9965669-005.A01G 16GB

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G Skill Intl F3-14900CL9-4GBSR 4GB

Kingston 99U5678-029.A00G 8GB

Kingston 99U5678-029.A00G 8GB