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Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
比较
Crucial Technology BLT2G3D1608DT1TX0 2GB vs Crucial Technology BLS8G4D240FSA.16FBD 8GB
总分
Crucial Technology BLT2G3D1608DT1TX0 2GB
总分
Crucial Technology BLS8G4D240FSA.16FBD 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
低于PassMark测试中的延时,ns
23
31
左右 26% 更低的延时
需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FBD 8GB
报告一个错误
更快的读取速度,GB/s
17.6
13.6
测试中的平均数值
更快的写入速度,GB/s
12.7
9.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
23
31
读取速度,GB/s
13.6
17.6
写入速度,GB/s
9.4
12.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2096
3084
Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较
Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix HMT325U6CFR8C-PB 2GB
Samsung 9905599-020.A00G 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
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Corsair CMSX32GX4M1A2666C18 32GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston KHX2400C1C14/16G 16GB
Samsung M471B5273CH0-CH9 4GB
Samsung M393A1K43BB0-CRC 8GB
Kllisre KRE-D3U1600M/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
报告一个错误
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Bug description
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