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Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
比较
Samsung 1600 CL10 Series 8GB vs Micron Technology 16ATF1G64AZ-2G1A1 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
Micron Technology 16ATF1G64AZ-2G1A1 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
42
左右 40% 更低的延时
更快的读取速度,GB/s
16.1
12.7
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1A1 8GB
报告一个错误
更快的写入速度,GB/s
10.2
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
42
读取速度,GB/s
16.1
12.7
写入速度,GB/s
10.1
10.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2764
2701
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2666C19-8GRS 8GB
Crucial Technology CT102464BA160B.M16 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Kingston 9905403-090.A01LF 4GB
Kllisre D4 8G 8GB
Unifosa Corporation GU512303EP0202 2GB
Samsung M378B5673FH0-CH9 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation PUD43000C158G2NJK 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston XJV223-MIE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M4B2800C14 16GB
Micron Technology 8KTF51264HZ-1G6D1 4GB
Micron Technology 8KTF51264HZ-1G6J1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-8GFXR 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KHX2666C16S4/16G 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMN32GX4M2Z4600C18 16GB
Kingston 9905403-090.A01LF 4GB
Kingston ACR21D4S15HAG/8G 8GB
报告一个错误
×
Bug description
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